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The engineers and scientists at WaferMasters have published more than 60 technical articles on rapid thermal processing, material characterization and equipment design since May 2000.

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58article(s) are found under the selected catagory.
Characterization of Process Induced Surface Profiles and Lattice Strains using Optical Surface Profilometry and Multi-wavelength Raman Spectroscopy
Mluti-wavelength Raman and HRTEM Study of Ni/Si Interface after NiSi Formation at Low Temperatures using Various Heating Methods
RAPID THERMAL PROCESSING FROM 100ºC TO 1100ºC WITHOUT LAMPS: ISOTHERMAL CAVITY CONCEPT AND PROCESS RESULTS
Pulsed Focused-Laser Beam Annealing of Ultra-Shallow Implanted Silicon and In Situ Dopant Activation Monitoring
Diffraction Originated Local Heating of Nanometer Scale Device Patterns in Lamp-Based Rapid Thermal Annealing
Rapid Thermal Scanning for Dopant Activation for Advanced Junction Technology
Deep-UV Raman Scattering Analysis of Re-Crystallization in Ultra-Shallow Junction Implanted Si under Various Annealing Conditions
UV-VIS Raman Characterization of High Dose Ultra Shallow Implanted Silicon before and after Excessive Annealing
Cobalt Silicide Formation Characteristics in a Single Wafer Rapid Thermal Furnace (SRTF) System
Hot Plate Emissivity Effect in Low Temperature Annealing
RAMAN STUDY ON THE PROCESS OF SI ADVANCED INTEGRATED CIRCUITS
Changes in Optical Properties during Nickel Silicide Formation and Potential Impact on Process Results using Various Heating Methods
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF INTERFACES BETWEEN THIN NICKEL LAYERS ON Si(001) AFTER NICKEL SILICIDE FORMATION UNDER VARIOUS ANNEALING CONDITIONS
Rapid Thermal Processing Strategies for Highly Uniform and Repeatable Process Results on Patterned Wafers
RAMAN STUDY OF LOW-TEMPERATURE FORMATION OF NICKEL SILICIDE LAYERS
NON-CONTACT, NON-DESTRUCTIVE CHARACTERIZATION OF CRYSTAL QUALITY IN ULTRA-SHALLOW ION IMPLANTED SILICON WAFERS BEFORE AND AFTER ANNEALING
CHARACTERIZATION OF ULTRA-SHALLOW IMPLANTED P+ LAYER ON P-TYPE SILICON SUBSTRATES AFTER FLASH ANNEAL AND CONVENTIONAL RAPID THERMAL ANNEAL
ULTRAVIOLET RAMAN SPECTROSCOPIC STUDY ON FLASH-ANNEAL RECRYSTALLIZATION OF ULTRA-SHALLOW BORON-IMPLANTED LAYER ON SILICON
ELECTRICAL ACTIVATION AND DOPANT DIFFUSION OF HEAVILY BORON IMPLANTED SILICON
Optimizing the Formation of Nickel Silicide
Using a noncontact stacked-hot-plate system to cure spin-on dielectrics
Post-Anneal Stress Reduction of 200 mm Silicon Wafers in Single Wafer Rapid Thermal Annealing
ULTRA-SHALLOW JUNCTION IMPLANT ANNEAL USING XENON ARC FLASH LAMPS
SIGNIFICANT IMPROVEMENT IN DEVICE PERFORMANCE OF ADVANCED DYNAMIC RANDOM ACCESS MEMORY BY HOT WALL-BASED SINGLE WAFER RAPID THERMAL ANNEALING
Electrical Activation of Ultra-Shallow B and BF2 Implanted Silicon by Flash Anneal
Post BF2+ Implant Annealing using Single Wafer Rapid Thermal Furnace
Design of a Hot Wall-Based Low Temperature Annealing System and Its Process Applications
ANNEALING CHARACTERISTICS OF COPPER FILMS FOR POWER DEVICE APPLICATIONS
ULTRA-SHALLOW IMPLANT ANNEAL USING SHORT WAVELENGTH FLASH LIGHT SOURCE
Thick copper inter connection annealing process development using a mini-batch stacked annealing oven
Redistribution of Boron and Fluorine Atoms in BF2 Implanted Silicon Wafers during Rapid Thermal Annealing
Production-Oriented Thermal Processing System and Its Processing Applications
Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace
Comparative Study on Implant Anneal using Single Wafer Furnace and Lamp-based Rapid Thermal Processor
Wet Oxidation using Single Wafer Furnace�
Hot Plates
Spin-on-Glass Bake and Cure using a Resistively Heated Batch Annealing�Oven
Dry Oxidation and Implant Anneal in a Single Wafer Rapid Thermal Furnace
Low Temperature Batch Annealing Oven and Its SOG Annealing Application
Design of Single-Wafer Furnace and Its Rapid Thermal Processing Applications
Dry Oxide Film Formation using Single Wafer Furnace
Temperature Uniformity Characterization of Single Wafer Furnace using Titanium Silicide Process
SOG Annealing Keeps Its Cool
Thermal Processing in a Single Wafer Rapid Thermal Furnace
Implant Anneal using Single Wafer Rapid Thermal Furnace (SRTF) and Lamp-based RTP System
CORRELATION BETWEEN HOT PLATE EMISSIVITY AND WAFER TEMPERATURE AT LOW TEMPERATURES
RAPID THERMAL IMPLANT ANNEALING USING COLD WALL AND HOT WALL SYSTEMS
Ultra-Shallow Implant Anneal Using Single Wafer Rapid Thermal Furnace
Single Wafer Rapid Thermal Furnace and Its Application to Silicidation, Oxidation and Implant Anneal
Implant Anneal using Single Wafer Furnace and Lamp-based Rapid Thermal Annealing System
Rapid Thermal Annealing of Arsenic Implanted Silicon Wafers
SOG Annealing Applications using a Hot Plate-Based Mini-batch System�
Very Thin Dry Oxide Film Growth using Single Wafer Rapid Thermal Furnace
Low-Temperature Annealing System for 300mm Thermal Processing�
Single Wafer Furnace with a Vacuum Loadlock
Single Wafer Furnace and Its Thermal Processing Applications
Slip-Free Rapid Thermal Processing in Single Wafer Furnace
Wafer Temperature Characterization during Low Temperature Annealing
 
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