DESIGN PHILOSPHY PROCESSES MEASURMENTS PRODUCT SPECS
SINGLE-WAFER RAPID THERMAL FURNACE
SRTF-302LP
 
1103mm (W) x 3379mm (D) x 1925mm (H)
 
- Vacuum Pump Included
- Monitor Space Extra

The SRTF-302LP system is designed based on a resistively heated, single wafer furnace technology to address conventional batch furnace thermal applications as well as RTP applications up tp 1100°C. The system provides excellent process repeatability and stability at a minimum cost of ownership.

 
 
 Applications
Silicidation (TiSi, CoSi, NiSi, WSi etc.)
Implant anneal
Oxidation (Dry & Wet)
Glass reflow
Film Densification
 
 
 Key Benefits & Specifications
Simple and Robust Design
Oxygen-Free Ambient: <30ppm
Two Vacuum Capable load locks
Built-in Two FOUP Openers
Wide Operating Termperaure Range: 200~1100°C
Excellent Process Uniformity:<1%(1sigma)
Excellent Process Repeatability: <3°C
Wide Process Window
Fast Ramp Rate: up to 100°C/s at 1100°C
Competitive Throughput
Fast Installation: 1day
Process Qualification: 1day
Minimum Maintenance: every 6 to 12 months
Minimum Consumables:

 

- Quartz tubes, thermocouples, heater units
- O-rings

Minimal Facility Requirement

 

- Electricity: 3 phase 220VAC 25kVA
- Process gases: up to 2 lines
- Cooling water
Small Footprint
Energy Efficient (Power Consumption < 10kW at 1100°C)
 
   
 
  Customers are strongly encouraged to discuss current processing problems and new applications with WaferMasters' technical staffs at our various locations. WaferMasters is willing to assist you to find simple and natural processing / equipment solutions.