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March 28th, 2011
-Joint paper with TSMC on B content measurement in ultra thin SiGe epitaxial layer will be available in issue 26(6) of JMR.
Noncontact, in-line measurement of boron concentration from ultrathin boron-doped epitaxial Si1–xGex layers on Si(100) by multiwavelength micro-Raman spectroscopy
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May 1st~6th, 2011
Montreal, QC, Canada
WaferMasters will present the following technical papers.
-Joint paper with IBM Vermont on TSV Stress Characterization
Stress Characterization of Tungsten-filled Through Silicon Via Arrays using Very High Resolution Multi-Wavelength Raman Spectroscopy
-Joint paper with ISMI on SiGe/Si
Evaluation of Very High Resolution Multi-Wavelength Raman Spectroscopy for In-Line Characterization of Patterned Epitaxial Si1-xGex Layers on Si(100) Wafers
-WaferMasters’ own paper on Global and Local Stress Characterization of SiN/Si
Global and Local Stress Characterization of SiN/Si(100) Wafers using Optical Surface Profilometer and Multiwavelength Raman Spectroscopy
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May 23rd~26th, 2011
MINATEC Campus in Grenoble, France
WaferMasters will present the following technical paper.
-One joint paper with International Sematech Manufacturing Initiative (ISMI)
High Resolution Multiwavelength m-Raman Spectroscopy for Nanoelectronic Material Characterization
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June 9th~10th, 2011
Kyoto University Uji Campus, Kyoto, Japan
WaferMasters will present the following paper
-Joint paper with Kyoto Institute of Technology
Study of Multi-wavelength-excited photoluminescence on recrystallization of ultra-shallow implanted silicon
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June 13th~16th, 2011
Rihga Royal Hotel, Kyoto, Japan
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July 12th~14th, 2010
Moscone Center, San Francisco, CA, USA
South Hall, Booth 427 |
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September 28th~30th, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
WaferMasters will present technical papers. |
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December 1st~3rd, 2011
Makuhari Messe, Makuhari, Chiba, Japan
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December 2nd~9th, 2011
Hilton Washington and Towers, Washington DC
WaferMasters will present technical papers. |
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